The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphire
- 1 November 1995
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (11) , 1519-1523
- https://doi.org/10.1007/bf02676804
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- The effect of thermal annealing on GaN nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor depositionJournal of Applied Physics, 1994
- Low resistivity indium tin oxide films by pulsed laser depositionApplied Physics Letters, 1993
- Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPEJournal of Crystal Growth, 1991
- GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics, 1991