Low resistivity indium tin oxide films by pulsed laser deposition
- 5 July 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (1) , 1-3
- https://doi.org/10.1063/1.109736
Abstract
Indium tin oxide films were grown by pulsed laser deposition on glass substrates. The electrical and optical properties of these films were studied. At optimized oxygen pressures, films with resistivity values of 1.4×10−4 and 5.6×10−4 Ω cm were deposited at substrate temperatures of 310 and 20 °C, respectively. Films with a thickness of 180 nm had a transmission of nearly 100% for the wavelength range of 600–800 nm.Keywords
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