Studies of the photovoltaic behaviour of indium tin oxide (ITO)/silicon junctions prepared by the reactive thermal evaporation technique
- 1 March 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (3) , 324-327
- https://doi.org/10.1088/0268-1242/7/3/007
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Mechanism of carrier transport in highly efficient solar cells having indium tin oxide/Si junctionsJournal of Applied Physics, 1991
- Studies on Evaporated Indium Tin Oxide (ITO)/Silicon Junctions and an Estimation of ITO Work FunctionJournal of the Electrochemical Society, 1991
- Electrical and optical properties of reactively evaporated indium tin oxide (ITO) films-dependence on substrate temperature and tin concentrationJournal of Physics D: Applied Physics, 1989
- Review of conductor-insulator-semiconductor (CIS) solar cellsSolar Cells, 1981
- Spray-deposited ITO—Silicon SIS heterojunction solar cellsIEEE Transactions on Electron Devices, 1980
- Efficient electron-beam-deposited ITO/n-Si solar cellsJournal of Applied Physics, 1979
- MIS solar cells: A reviewIEEE Transactions on Electron Devices, 1978
- Efficient sprayed In2O3 : Sn n-type silicon heterojunction solar cellApplied Physics Letters, 1977
- Efficient photovoltaic heterojunctions of indium tin oxides on siliconApplied Physics Letters, 1976
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971