Theoretical and experimental investigation of watt-level wafer scale integration microwave and millimeter-wave GaAs and AlGaAs frequency multipliers
- 1 November 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (11) , 2611-2612
- https://doi.org/10.1109/16.43720
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- High-speed enhancement-mode InP MISFET's grown by chloride vapor-phase epitaxyIEEE Transactions on Electron Devices, 1989
- Watt-level millimeter-wave monolithic diode-grid frequency multipliersReview of Scientific Instruments, 1988
- High-speed monolithic GaInAs pin FETElectronics Letters, 1988