High-speed enhancement-mode InP MISFET's grown by chloride vapor-phase epitaxy
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (2) , 256-262
- https://doi.org/10.1109/16.19924
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- High-performance submicrometer AlInAs-GaInAs HEMT'sIEEE Electron Device Letters, 1988
- Studies on an In0.53Ga0.47As/In0.52Al0.48As single-quantum-well quasi-MISFETIEEE Transactions on Electron Devices, 1987
- Very high transconductance InGaAs/InP junction field-effect transistor with submicrometer gateApplied Physics Letters, 1987
- Progress and Challenges in HEMT LSI TechnologyPublished by Springer Nature ,1987
- Microwave performance of InAlAs/InGaAs/InP MODFET'sIEEE Electron Device Letters, 1987
- Gigahertz logic gates based on InP-MISFET's with minimal drain current driftIEEE Electron Device Letters, 1986
- Millimeter-wave low-noise high electron mobility transistorsIEEE Electron Device Letters, 1985
- Channel mobility enhancement in InP metal-insulator-semiconductor field-effect transistorsApplied Physics Letters, 1985
- Low-power high-speed InP MISFET direct-coupled FET logicIEEE Transactions on Electron Devices, 1984
- High field transport in GaAs, InP and InAsSolid-State Electronics, 1984