Very high transconductance InGaAs/InP junction field-effect transistor with submicrometer gate

2 March 1987

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 50 (9) , 535-536
https://doi.org/10.1063/1.98151

Abstract

A very high transconductance (260 mS/mm) has been achieved for the first time with an InGaAs/InP junction field-effect transistor. The transistor was fabricated using a chemical etching technique which allowed the fabrication of submicrometer gate (0.5 μm). Very low values of access resistance were obtained using a self-aligned technology.

Keywords

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