MOS characteristics of ultrathin SiO/sub 2/ prepared by oxidizing Si in N/sub 2/O
- 1 August 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (8) , 416-418
- https://doi.org/10.1109/55.119150
Abstract
MOS characteristics of ultrathin gate oxides prepared by furnace oxidizing Si in N/sub 2/O have been studied. Compared to control oxides grown in O/sub 2/, N/sub 2/O oxides exhibit significantly improved resistance to charge trapping and interface state generation under hot-carrier stressing. In addition, both charge to breakdown and time to breakdown are improved considerably. MOSFETs with N/sub 2/O gate dielectrics exhibit enhanced current drivability and improved resistance to g/sub m/ degradation during channel hot-electron stressing.Keywords
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