Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O
- 3 September 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (10) , 1010-1011
- https://doi.org/10.1063/1.103550
Abstract
This letter presents a unique process to grow high quality ultrathin (∼60 Å) gate dielectrics using N2O (nitrous oxide) gas. Compared with conventional rapid thermally grown oxide in the O2, the new oxynitride dielectrics show very large charge‐to‐breakdown (at +50 mA/cm2, 850 C/cm2 for oxynitride compared to 95 C/cm2 for the control thermal oxide) and less charge trapping under constant current stress. Significantly reduced interface state generation was also observed under constant current stress and x‐ray radiation. A secondary‐ion mass spectroscopy depth profile indicates a nitrogen‐rich layer at the Si/SiO2 interface, which can explain the improved integrity of oxynitride dielectric.Keywords
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