Hole Transport in Glow-Discharge Produced a-Si:H:F Film

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Abstract
The transition in the hole transport at 351 K from dispersive to nondispersive has been observed using the time-of-flight technique on a-Si:H:F film lightly doped with boron, prepared by glow discharge in a gas mixture of SiF4, SiH4 and H2. The activation energy of the hole-drift mobility is 0.286 eV when the transport is nondispersive. The dispersion parameter has a large temperature dependence consistent with the multiple trapping transport. This film shows higher photoluminescence intensity than undoped and other boron doped films exhibiting the dispersive transport of holes over an examined temperature range.