Activation and deactivation studies of laser thermal annealed boron, arsenic, phosphorus, and antimony ultra-shallow abrupt junctions
- 10 July 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 155-158
- https://doi.org/10.1109/iit.2000.924113
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
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