Characterization of the mechanical properties of a–SiC: H films

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Abstract
Amorphous hydrogenated silicon carbide (a–SiC: H) thin films (t < 1 μm) were grown from two different precursor gases, a methane/silane mixture and silacyclobutane (SiC3H8). Plasma enhanced chemical vapor deposition was used to deposit a–SiC: H thin films on silicon substrates at temperatures of 175 °C and 600 °C. These a–SiC: H films were characterized using the mechanical properties microprobe (nanoindenter) and by scratch testing. Data and mechanical properties information collected from these measurements have been correlated with film process conditions and materials characteristics. A simplified approach was used to calculate the average nanoindentation hardness from shallow indentations. Using this technique, results for a silicon wafer are in good agreement with that previously reported. Analysis of the substrate influence on the thin film nanoindentation data implies that the measured hardness is relatively unaffected by the substrate, while the measured elastic properties are somewhat influenced by the substrate. The a–SiC: H film hardness is shown to depend on the precursor gas and molecular bonding, while the elastic properties vary with precursor gas, composition, and density, as influenced by the plasma source deposition power. The MPM data and scratch test data show similar correlations to plasma source power, film structure, and film composition.

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