Deposition mechanism of hydrogenated amorphous SiGe Films
- 1 September 1988
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 163, 123-130
- https://doi.org/10.1016/0040-6090(88)90417-8
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Glow-discharge amorphous silicon: Growth process and structureMaterials Science Reports, 1987
- Vacuum ultraviolet absorption cross sections of SiH4, GeH4, Si2H6, and Si3H8The Journal of Chemical Physics, 1986
- Amorphous SiGe: H for High Performance Solar CellsJapanese Journal of Applied Physics, 1981