Hydride multibarrel reactors suitable for microwave and optoelectronic (Ga, In)(As, P) heterostructure growth
- 1 April 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 57 (2) , 379-386
- https://doi.org/10.1016/0022-0248(82)90494-8
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Vapor phase epitaxial growth of InGaAs/InAsP heterojunctions for long wavelength transferred electron photocathodesJournal of Crystal Growth, 1980
- Vapor Phase Growth of InGaAsP/InP DH Structures by the Dual-Growth-Chamber MethodJapanese Journal of Applied Physics, 1980
- Crystal growth and properties of binary, ternary and quaternary (In,Ga)(As,P) alloys grown by the hydride vapor phase epitaxy techniqueProgress in Crystal Growth and Characterization, 1979
- Reliability of vapor-grown InGaAs and InGaAsP heterojunction laser structuresIEEE Journal of Quantum Electronics, 1979
- Vapor Phase Epitaxial Growth and Characterization of Ga1-yInyAs1-xPxQuaternary AlloysJapanese Journal of Applied Physics, 1977