Nitrogen trap in the semiconductor alloys GaAs1−χxPχx and AlχxGa1−χxAs
- 31 January 1979
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 18-19, 863-867
- https://doi.org/10.1016/0022-2313(79)90252-7
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Nitrogen isoelectronic trap in : II. Model calculation of the electronic states and at low temperaturePhysical Review B, 1977
- Theory of light absorption and non-radiative transitions in F -centresProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1950