Amorphous phase formation and stability in W-Ti-Si metallization materials

This publication has 23 references indexed in Scilit:

• Process and device performance of submicrometer-channel CMOS devices using deep-trench isolation and self-aligned TiSi2technologies
  IEEE Transactions on Electron Devices, 1985
• PREDICTION OF GLASS FORMING RANGE IN TERNARY ALLOYS FROM THE CONSTITUENT BINARY SYSTEMS
  Published by Elsevier ,1985
• Amorphous metal-semiconductor contacts for high temperature electronics—I Materials and characterisation
  Solid-State Electronics, 1984
• Dependence of electronic properties of polysilicon grain size and intragrain defects
  Solid-State Electronics, 1983
• An MSI GaAs Integrated Circuit Using Ti/W Silicide Gate Technology
  Japanese Journal of Applied Physics, 1983
• (Invited) Silicide Contact for Shallow Junction Devices
  Japanese Journal of Applied Physics, 1983
• General aspects of barrier layers for very-large-scale integration applications II: Practice
  Thin Solid Films, 1982
• Thermal stability data of amorphous binary alloys
  Bulletin of Alloy Phase Diagrams, 1981
• Refractory silicides for integrated circuits
  Journal of Vacuum Science and Technology, 1980
• Amorphous structures and their formation and stability
  Journal of Materials Science, 1976