In-situ observation of stress induced generation and motion dislocations in InP crystals
- 31 October 1985
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 73 (1) , 190-192
- https://doi.org/10.1016/0022-0248(85)90346-x
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Isoelectronic Double Doping Effect on Dislocation Density of InP Single CrystalJapanese Journal of Applied Physics, 1984
- Dislocation Velocities in Indium PhosphideJapanese Journal of Applied Physics, 1981