Defect Control During Epitaxial Regrowth by Rapid Thermal Annealing
- 1 January 1982
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Activation of arsenic-implanted silicon using an incoherent light sourceApplied Physics Letters, 1981
- Heat-pulse annealing of arsenic-implanted silicon with a CW arc lampIEEE Electron Device Letters, 1981
- Radiation Annealing of Boron-Implanted Silicon with a Halogen LampJapanese Journal of Applied Physics, 1980
- Unidirectional contraction in boron-implanted laser-annealed siliconApplied Physics Letters, 1978