A new concept for a non punch through IGBT with MOSFET like switching characteristics

13 January 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 21-25 vol.1
https://doi.org/10.1109/pesc.1989.48468

Abstract

An IGBT (insulated-gate bipolar transistor) is presented which is based on bulk silicon material without a buffer layer. In contrast to other devices the carrier lifetime was kept as high as possible. It is shown that such a device with a breakdown voltage of 1400 V and a short-circuit capability of 1200 V at 20 V gate voltage has on-state and switching losses that are not higher-maybe even lower- than those of a buffer layer device if its backside p-emitter efficiency is kept low enough.<>

Keywords

This publication has 2 references indexed in Scilit:

Comparison of the Punch-Through and Non-Punch-Through IGT Structures
IEEE Transactions on Industry Applications, 1986
600- and 1200-V bipolar-mode MOSFET's with high current capability
IEEE Electron Device Letters, 1985