600- and 1200-V bipolar-mode MOSFET's with high current capability
- 1 July 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 6 (7) , 378-380
- https://doi.org/10.1109/edl.1985.26161
Abstract
600-V 25-A and 1200-V 20-A bipolar-mode MOSFET's (T-BIFET) with 100-A and 75-A maximum current capability, respectively, have been developed, based on a new pattern design theory for high latch-up current density. It is also shown than an n+-buffer layer improves a tradeoff between the forward voltage and the turn-off time, compared with an ordinary n-buffer layer.Keywords
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