Atomic Layer Epitaxy of ZnSe-(CdSe)m(ZnSe)n Short-Period Superlattice Multiple Quantum Wells
- 1 November 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (11B) , L1583
- https://doi.org/10.1143/jjap.31.l1583
Abstract
Atomic-layer epitaxy growth of ZnSe-(CdSe) m (ZnSe) n short-period superlattice multiple quantum wells (SPSQWs) has been investigated. High crystalline quality has been achieved in this system by the introduction of an ultra-short-period (CdSe) m (ZnSe) n superlattice in the well to replace a ZnCdSe alloy, due to the success in solving problems associated with mismatch dislocations and alloying. Material characterizations have been performed by X-ray diffraction and photoluminescence. The critical thickness of CdSe on ZnSe has been determined to be less than four monolayers.Keywords
This publication has 13 references indexed in Scilit:
- ZnSe based multilayer pn junctions as efficient light emitting diodes for display applicationsApplied Physics Letters, 1992
- Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wellsApplied Physics Letters, 1991
- Blue-green laser diodesApplied Physics Letters, 1991
- Atomic layer epitaxy of (CdTe)m(ZnTe)n-ZnTe multiquantum wells on (001)GaAs substrateJournal of Crystal Growth, 1991
- Excitonic and Raman properties of ZnSe/Zn1−xCdxSe strained-layer quantum wellsJournal of Applied Physics, 1991
- Molecular beam epitaxy of CdSe and the derivative alloys Zn1−x Cd x Se and Cd1−x M x SeJournal of Electronic Materials, 1990
- Exciton luminescence in ideal solid solutions (ZnxCd1−xSe system,0 < x < 1)Solid State Communications, 1989
- Growth of cubic (zinc blende) CdSe by molecular beam epitaxyApplied Physics Letters, 1989
- Atomic layer epitaxy of ZnSe-ZnTe strained layer superlatticesJournal of Crystal Growth, 1989
- Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAsApplied Physics Letters, 1986