Determination of Hydrogen Concentration in PCVD Silicon Nitride Films by Elastic Recoil Detection Analysis
- 1 September 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (9R)
- https://doi.org/10.1143/jjap.26.1606
Abstract
The hydrogen concentrations of PCVD silicon nitride films were measured by Elastic Recoil Detection (ERD) analysis using 2.5 MeV He+ ions. For annealed films, H concentrations measured by ERD analysis are smaller than those measured by an infrared absorption analysis. These results indicate that absorption cross sections of Si-hydrogen and N-hydrogen bonds are changed by annealing.Keywords
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