Hydrogen bonding configurations in silicon nitride films prepared by plasma-enhanced deposition
- 1 July 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (1) , 484-489
- https://doi.org/10.1063/1.335650
Abstract
Hydrogen chemical bonding configurations in amorphous silicon nitride films prepared by plasma-enhanced chemical vapor deposition are determined for the first time. This is accomplished by measuring the difference spectra between the absorption spectrum of an annealed or a hydrogen implanted film and that of a reference film, mostly as-grown film. Three- and two-bonding configurations for Si-hydrogen and N-hydrogen bonds are separated and assigned to Si-H(2120 cm−1), Si-H2 and/or (Si-H2)n chains (2180 cm−1), Si-H3(2255 cm−1), N-H(3320 cm−1), and N-H2(3280 and 3345 cm−1), respectively. Si-H2 bonds are the most thermally stable and N-H2 bonds are more thermally stable than N-H bonds. It is found that N-H bonds form the hydrogen bonding in the films.This publication has 11 references indexed in Scilit:
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