Novel NICE (nitrogen implantation into CMOS gate electrode and source-drain) structure for high reliability and high performance 0.25 μm dual gate CMOS
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 325-328
- https://doi.org/10.1109/iedm.1993.347342
Abstract
We have proposed a novel structure with high reliability and high performance by nitrogen implantation into gate electrode and source-drain region for 0.25 /spl mu/m dual gate CMOS. It was found that the hot carrier resistance of both N-ch and P-ch MOSFETs can be effectively improved by incorporating nitrogen into the gate oxide with nitrogen implantation on the poly silicon gate. Moreover it was found that Ti-salicided shallow junction for 0.25 /spl mu/m CMOS can be successfully formed without increasing the junction leakage current.<>Keywords
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