Double-doped power heterojunction FET for 1.5 V digital cellular applications
- 31 October 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (10) , 1587-1590
- https://doi.org/10.1016/s0038-1101(97)00109-3
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- 3 V operation L-band power double-doped heterojunction FETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applicationsIEEE Electron Device Letters, 1996
- Analysis and Improvement of Intermodulation Distortion in GaAs Power FET'sIEEE Transactions on Microwave Theory and Techniques, 1980