5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications
- 1 May 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 17 (5) , 229-231
- https://doi.org/10.1109/55.491838
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- A high power-added efficiency GaAs power MESFET operating at a very low drain bias for use in L-band medium-power amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Advanced technologies of low-power GaAs ICs and power modules for cellular telephonesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Highly efficient, very compact GaAs power module for cellular telephonePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 3 V operation L-band power double-doped heterojunction FETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High performance integrated PA, T/R switch for 1.9 GHz personal communications handsetsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 2.9 V operation GaAs power MESFET with 31.5-dBm output power and 64% power-added efficiencyIEEE Electron Device Letters, 1994
- Highly efficient double-doped heterojunction FET's for battery-operated portable power applicationsIEEE Electron Device Letters, 1994