2.9 V operation GaAs power MESFET with 31.5-dBm output power and 64% power-added efficiency
- 1 September 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (9) , 324-326
- https://doi.org/10.1109/55.311122
Abstract
A state-of-the-art GaAs power MESFET operating at a drain bias of 2.9 V has been developed using the high-low doped channel structure grown by molecular beam epitaxy. The device has 0.6 /spl mu/m gate length and 16 mm gate width. The power performance tested at a 2.9 V drain bias and 900 MHz operation frequency was output power of 31.5 dBm with 11.5 dB gain and 64% power-added efficiency.Keywords
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