Discovery of narrow-band photoionization resonance transition at 0.65 eV in AlGaAs/GaAs heterostructures
- 9 August 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 71 (6) , 903-906
- https://doi.org/10.1103/physrevlett.71.903
Abstract
We have discovered an alternate pathway below the usual 1.1 eV threshold for Si photoionization from the DX ground state in AlGaAs. This alternate photpath proceeds via a 0.1 eV wide resonance at 0.65 eV. The ionization rate for this path scales as the square of the resonance photon intensity, not linearly with the intensity as does the usual 1.1 eV threshold path. Photons at 0.5 eV accompanied by weak photon fluxes at 0.65 eV do scale linearly with 0.5 eV intensity showing the 0.65 eV state is a short-lived resonant intermediate level.Keywords
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