New Negative Conductances in GaAs n+-n-n+ Ballistic Diodes
- 1 April 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (4A) , L255
- https://doi.org/10.1143/jjap.22.l255
Abstract
Two terminal conductances for GaAs n+-n-n+ ballistic diodes are calculated by using a simplified diode model. It is found from the results that, due to space charge transit time effects, negative conductances appear in such ballistic diodes at a far infrared frequency range. It is also demonstrated that diode conductance-frequency characteristics are affected significantly by the plasma oscillation frequency.Keywords
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