Crystallization of amorphous Ge in Ge/Au bilayer films and Ge-Au alloy films
- 1 May 1985
- journal article
- Published by IOP Publishing in Chinese Physics Letters
- Vol. 2 (5) , 221-224
- https://doi.org/10.1088/0256-307x/2/5/008
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Similarity in interactions between metal–semiconductor and metal–metal interfacesJournal of Vacuum Science and Technology, 1982
- Interfacial reactions between Au and hydrogenated amorphous SiJournal of Vacuum Science and Technology, 1982
- The kinetics of transformation in amorphous germanium alloy filmsThin Solid Films, 1977
- Amorphous Ge alloy films. II. Transport propertiesPhysica Status Solidi (a), 1976
- Amorphous Ge Alloy Films. I. Structural PropertiesPhysica Status Solidi (a), 1975
- Crystallization of Ge and Si in metal films. IIJournal of Applied Physics, 1974
- Crystallization of Ge and Si in metal films. IJournal of Applied Physics, 1974
- Metal contact induced crystallization in films of amorphous silicon and germaniumJournal of Non-Crystalline Solids, 1972
- The influence of contact materials on the conduction crystallization temperature and electrical properties of amorphous germanium, silicon and boron filmsThin Solid Films, 1970
- Effect of Deposited Metals on the Crystallization Temperature of Amorphous Germanium FilmJapanese Journal of Applied Physics, 1969