Charge transport in oxygen-doped polysilicon layers on Si
- 1 January 1978
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 13 (12) , 821-824
- https://doi.org/10.1051/rphysap:01978001301200
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Electronic properties of Semi-Insulating Polycrystalline-Silicon (SIPOS) doped with oxygen atomsSolid State Communications, 1977
- Highly reliable high-voltage transistors by use of the SIPOS processIEEE Transactions on Electron Devices, 1976