Electronic properties of Semi-Insulating Polycrystalline-Silicon (SIPOS) doped with oxygen atoms
- 28 February 1977
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 21 (6) , 591-593
- https://doi.org/10.1016/0038-1098(77)90040-0
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Semi-Insulating Polycrystalline-Silicon (SIPOS) Films Applied to MOS Integrated CircuitsJapanese Journal of Applied Physics, 1976
- Semi-Insulating Polycrystalline-Silicon (SIPOS) Passivation TechnologyJapanese Journal of Applied Physics, 1976
- Theory and interpretation of the field-effect conductance experiment in amorphous siliconJournal of Applied Physics, 1975
- Field-effect conductance change in amorphous siliconApplied Physics Letters, 1974
- Theory of the Field Effect in Amorphous Covalent Semiconductor FilmsJournal of Vacuum Science and Technology, 1971
- Simple Band Model for Amorphous Semiconducting AlloysPhysical Review Letters, 1969