Origin of luminescence in porous silicon
- 30 November 1992
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 84 (6) , 691-693
- https://doi.org/10.1016/0038-1098(92)90216-v
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Correlation between silicon hydride species and the photoluminescence intensity of porous siliconApplied Physics Letters, 1992
- Anomalous temperature dependencies of photoluminescence for visible-light-emitting porous SiApplied Physics Letters, 1992
- The origin of visible luminescencefrom “porous silicon”: A new interpretationSolid State Communications, 1992
- Thermal treatment studies of the photoluminescence intensity of porous siliconApplied Physics Letters, 1991
- Evidence for quantum confinement in the photoluminescence of porous Si and SiGeApplied Physics Letters, 1991
- Photoluminescence of high porosity and of electrochemically oxidized porous silicon layersSurface Science, 1991
- Atmospheric impregnation of porous silicon at room temperatureJournal of Applied Physics, 1991
- Efficient Visible Photoluminescence from Porous SiliconJapanese Journal of Applied Physics, 1991
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- The characterisation of porous silicon by Raman spectroscopySemiconductor Science and Technology, 1988