The characterisation of porous silicon by Raman spectroscopy

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Abstract
The authors have measured the room temperature Raman spectrum from porous films on silicon substrates. Data from films on degenerate substrates showed a Raman peak at the frequency expected for bulk silicon together with a peak shifted to lower frequencies. This was interpreted in terms of material having, in general, two different dimensions. Raman spectra from films on nondegenerate substrates show, in addition to the single crystalline peak, a broad wing extending to low frequencies. They have interpreted this as due to the amorphous component in the film, although a similar spectrum may be obtained from the interface region between the silicon pores and their oxide.