Nucleation and growth rate of a-Si alloys
- 1 January 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (1) , 90-92
- https://doi.org/10.1063/1.93738
Abstract
From fitting the crystallization rate to an Arrhenius rate expression with a single activation energy we found that it is possible to distinguish a purely amorphous silicon sample from one having trace crystallinity. Whenever microcrystallites are present whether from heavy P doping or heat treatment, the ‘‘activation energy’’ is approximately 1 eV, whereas purely amorphous silicon has an activation energy of 3–4 eV. In other words, the exponent on time in the Avrami expression is different for the nucleation and growth processes.Keywords
This publication has 10 references indexed in Scilit:
- Critical volume fraction of crystallinity for conductivity percolation in phosphorus-doped Si:F:H alloysApplied Physics Letters, 1982
- Low-temperature crystallization of doped a-Si:H alloysApplied Physics Letters, 1980
- Electroreflectance and Raman scattering investigation of glow-discharge amorphous Si:F:HSolid State Communications, 1980
- Polycrystalline silicon films deposited in a glow discharge at temperatures below 250 °CApplied Physics Letters, 1980
- Polycrystalline silicon by glow discharge techniqueApplied Physics Letters, 1979
- Solid-state epitaxial growth of deposited Si filmsApplied Physics Letters, 1979
- Optical properties and structure of amorphous silicon films prepared by CVDSolar Energy Materials, 1979
- Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layersJournal of Applied Physics, 1977
- The crystallization of amorphous silicon filmsJournal of Non-Crystalline Solids, 1972
- Recrystallization and grain growthProgress in Metal Physics, 1952