Polycrystalline silicon films deposited in a glow discharge at temperatures below 250 °C
- 15 January 1980
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (2) , 163-165
- https://doi.org/10.1063/1.91416
Abstract
Raman scattering, x-ray diffraction and electron diffraction results show that thin films of silicon (ranging in thickness from a few hundred Å to 1 μm) prepared by chemical transport in low-pressure hydrogen plasma at a temperature between 230 and 280 °C and a deposition rate of up to ∼0.5 Å sec−1, are polycrystalline. X-ray diffraction and transmission electron microscopic data indicate crystallite sizes amounting to a few hundred Å.Keywords
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