Very high gain millimeter-wave InAlAs/InGaAs/GaAs metamorphic HEMT's

1 November 1999

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 20 (11) , 551-553
https://doi.org/10.1109/55.798040

Abstract

We report the first demonstration of W-band metamorphic HEMTs/LNA MMICs using an AlGaAsSb lattice strain relief buffer layer on a GaAs substrate. 0.1/spl times/50 /spl mu/m low-noise devices have shown typical extrinsic transconductance of 850 mS/mm with high maximum drain current of 700 mA/mm and gate-drain breakdown voltage of 4.5 V. Small-signal S-parameter measurements performed on the 0.1-/spl mu/m devices exhibited an excellent f/sub T/ of 225 GHz and maximum stable gain (MSG) of 12.9 dB at 60 GHz and 10.4 dB at 110 GHz. The three-stage W-band LNA MMIC exhibits 4.2 dB noise figure with 18 dB gain at 82 GHz and 4.8 dB noise figure with 14 dB gain at 89 GHz, The gain and noise performance of the metamorphic HEMT technology is very close to that of the InP-based HEMT.

Keywords

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