Frequency response analysis of intensity modulated photocurrents at semiconductor electrodes
- 1 October 1990
- journal article
- Published by Elsevier in Electrochimica Acta
- Vol. 35 (10) , 1657-1664
- https://doi.org/10.1016/0013-4686(90)80022-g
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Deconvolution of Charge Injection Steps in Quantum Yield Multiplication on SiliconPhysical Review Letters, 1988
- Frequency response analysis of photocurrent doubling the reduction of oxygen at p-GaAsJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1986
- Determination of the rate constant for hole injection during current doubling at p-GaAsElectrochimica Acta, 1986
- The reduction of oxygen at illuminated p-GaAsJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1986
- Surface recombination at semiconductor electrodesJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1986
- Surface recombination at semiconductor electrodesJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1985
- The reduction of oxygen at illuminated p-GaPJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1985
- Surface recombination at semiconductor electrodesJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1984
- Anodic properties of n-Si and n-Ge electrodes in HF solution under illumination and in the darkJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1983
- Depletion-Layer Photoeffects in SemiconductorsPhysical Review B, 1959