Charge transport and trapping characteristics in thin nitride-oxide stacked films
- 1 November 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (11) , 616-618
- https://doi.org/10.1109/55.9294
Abstract
A charge transport and trapping model for thin nitride-oxide stacked films between silicon substrates and polysilicon gates is proposed. Nitride-oxide stacked films can be thought of as an oxide film with electron trapping at the nitride/oxide interface. The density of electron trapping is determined by the current-continuity requirement. The electron trapping reduces the leakage current and helps to lower the incidence of early failures for nitride-oxide stacked films.<>Keywords
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