Raman scattering measurement of the free-carrier concentration and of the impurity location in boron-implanted silicon
- 1 April 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (4) , 1548-1550
- https://doi.org/10.1063/1.323876
Abstract
Using Raman scattering we have measured the number of free carriers and the fraction of boron ions in substitutional positions, in boron‐implanted silicon, as a function of the annealing temperature. After implantation, silicon is n type and becomes p type above 600 °C. The doping is governed at low temperatures by the annealing of defects and above 600 °C by the migration of boron ions into substitutional positions.This publication has 16 references indexed in Scilit:
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