Raman study of the vibrational properties of implanted silicon
- 16 June 1974
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 23 (2) , 383-391
- https://doi.org/10.1002/pssa.2210230206
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Low frequency Raman scattering in amorphous materials: a-Ge, a-InSb, and a-Ge0.5Sn0.5Solid State Communications, 1972
- Raman scattering in amorphous Ge and III–V compoundsJournal of Non-Crystalline Solids, 1972
- Disorder in implanted semiconductors: Energy dependence and penetration depthPhysica Status Solidi (a), 1971
- Raman Spectra of Amorphous Si and Related Tetrahedrally Bonded SemiconductorsPhysical Review Letters, 1971
- Raman-Scattering Selection-Rule Breaking and the Density of States in Amorphous MaterialsPhysical Review Letters, 1970
- A model for the formation of amorphous Si by ion bombardmentRadiation Effects, 1970
- Relation of neutron to ion damage annealing in Si and GeRadiation Effects, 1969
- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968
- Theory of the resonance Raman effect in crystalsJournal de Physique, 1965
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955