Ion-implantation damage and annealing effects in (InGa)AsGaAs strained-layer semiconductor systems
- 31 December 1988
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 4 (4-5) , 585-589
- https://doi.org/10.1016/0749-6036(88)90243-1
Abstract
No abstract availableKeywords
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