Be-implantation doping of GaAsxP1−x/GaP strained-layer superlattices

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Abstract
We present Hall‐effect measurements of the first localized p‐type doping in GaAsxP1−x /GaP strained‐layer superlattices achieved by implantation of 1×1015 cm−2, 75 kV 9Be+ followed by controlled‐atmosphere annealing at 825 °C for 10 min. The acceptor activation (∼15% at 300 K) and the mobilities in the p regions (∼20 cm2/Vs at 300 K) are consistent with the values expected for type‐converted GaP‐based alloys. Depth‐dependent structural characterization by ion channeling demonstrates that the superlattice structure survived the implantation and annealing without loss of layer strain. These results demonstrate that Be implantation can be applied to produce localized doping in a strained‐layer superlattice system and reflect favorably on the stability of strained‐layer superlattices under particle bombardment and thermal cycling.