Concentration profiles of antimony-doped shallow layers in silicon
- 9 April 2004
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 19 (6) , 728-732
- https://doi.org/10.1088/0268-1242/19/6/012
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new toolJournal of Physics D: Applied Physics, 2003
- Low resistive ultra shallow junction for sub 0.1 μm MOSFETs formed by Sb implantationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Si self-interstitial injection from Sb complex formation in SiJournal of Applied Physics, 2000
- Antimony Clustering due to High-dose ImplantationMRS Proceedings, 2000
- Arsenic deactivation enhanced diffusion: A time, temperature, and concentration studyJournal of Applied Physics, 1998
- Native Defects and their Interactions with Impurities in SiliconMRS Proceedings, 1997
- Device-grade ultra-shallow junctions fabricated with antimonyIEEE Electron Device Letters, 1986
- The nature of electrically inactive antimony in siliconJournal of Applied Physics, 1986
- Antimony and arsenic segregation at Si-SiO2interfacesIEEE Electron Device Letters, 1985
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960