keV ion sputtering of hydroxyapatite

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Abstract
Thin films of hydroxyapatite have been deposited by 5 keV ion sputtering on titanium substrates at room temperature. The sputtering yield is about 5×10−2 molecules/ion for argon beam and shows a linear trend with the ion nuclear stopping power of incoming beams. Noble gases have been adopted to avoid chemical reaction between implanted ions and hydroxyapatite target. Auger electron spectroscopy has been used in a high vacuum chamber to measure in situ the stoichiometry of the deposited film.