Atomic resolution EELS analysis of a misfit dislocation at a GeSi/Si interface

This publication has 19 references indexed in Scilit:

• Period-Doubled Structure for the90°Partial Dislocation in Silicon
  Physical Review Letters, 1997
• Electronic and elastic properties of edge dislocations in Si
  Physical Review B, 1995
• Chemically sensitive structure-imaging with a scanning transmission electron microscope
  Nature, 1988
• Visibility of single heavy atoms on thin crystalline silicon in simulated annular dark-field STEM images
  Acta Crystallographica Section A Foundations of Crystallography, 1988
• Forbidden-reflection lattice imaging for the determination of kink densities on partial dislocations
  Philosophical Magazine A, 1986
• Theoretical study of stacking faults in silicon
  Physical Review B, 1985
• Line defects in silicon: The 90° partial dislocation
  Physical Review B, 1984
• 30° Partial Dislocations in Silicon: Absence of Electrically Active States
  Physical Review Letters, 1982
• The ground state spin of 180Ta is not 8+
  Journal de Physique Lettres, 1979
• The electrical properties of stacking faults and precipitates in heat-treated dislocation-free Czochralski silicon
  Applied Physics Letters, 1977