Inverse photoemission study of nickel silicides
- 31 January 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 57 (1) , 1-3
- https://doi.org/10.1016/0038-1098(86)90658-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Structural aspects of the reaction of Ni with Si{111} surfacesSurface Science, 1985
- The electronic structure and the correlation energy in NiSSolid State Communications, 1985
- Correlation effects in valence-band spectra of nickel silicidesPhysical Review B, 1984
- Probing valence states with photoemission and inverse photoemissionJournal of Vacuum Science & Technology A, 1984
- Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiEpitaxial StructuresPhysical Review Letters, 1983
- Stoichiometry and structural disorder effects on the electronic structure of Ni and Pd silicidesPhysical Review B, 1982
- Electronic structure of nickel silicidesSi, NiSi, and NiPhysical Review B, 1982
- Photoemission and band-structure results for NiPhysical Review B, 1982
- Transition metal silicides: aspects of the chemical bond and trends in the electronic structureJournal of Physics C: Solid State Physics, 1981
- Isochromat and SXAPS studies of empty electronic states in chromium, iron and nickelJournal of Physics F: Metal Physics, 1981