Strained layer epitaxy of InGaAs by MBE and migration enhanced epitaxy — comparison of growth modes and surface quality
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 228-232
- https://doi.org/10.1016/0022-0248(91)90976-c
Abstract
No abstract availableKeywords
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