Study of boron nitride gate insulators onto InP grown by low-temperature chemical vapor deposition
- 15 April 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (8) , 3098-3102
- https://doi.org/10.1063/1.333306
Abstract
Thin films of phosphorus‐doped boron nitride have been grown onto InP, as a new gate insulator, by low‐temperature chemical vapor deposition using the reaction of NH3, B2H6, and PH3. Characteristics of the pyrolytic boron nitride obtained have been investigated by ellipsometry, x‐ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and conductivity measurement. The results of XPS and AES have shown that a stable and comparatively stoichiometric boron nitride film was successfully obtained, even at low temperatures (300–600 °C), by using the two‐temperature zone technique. The density of interface states for the BN/InP system has been found to be about 1010 cm−2 eV−1 or less around the midgap.This publication has 10 references indexed in Scilit:
- Chemical deposition of PAsxNy films onto III–V compound semiconductorsThin Solid Films, 1983
- Chemical vapor deposition and characterization of phosphorus nitride (P3N5) gate insulators for InP metal-insulator-semiconductor devicesJournal of Applied Physics, 1982
- The Chemical Deposition of Boron‐Nitrogen FilmsJournal of the Electrochemical Society, 1980
- Effect of Growth Parameters on the CVD of Boron Nitride and Phosphorus‐Doped Boron NitrideJournal of the Electrochemical Society, 1979
- Structure and Properties of Boron Nitride Films Grown by High Temperature Reactive Plasma DepositionJournal of the Electrochemical Society, 1976
- Hartree-Slater subshell photoionization cross-sections at 1254 and 1487 eVJournal of Electron Spectroscopy and Related Phenomena, 1976
- CVD‐BN for Boron Diffusion in Si and Its Application to Si DevicesJournal of the Electrochemical Society, 1975
- Preparation and Properties of Thin Film Boron NitrideJournal of the Electrochemical Society, 1968
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962