P-type AlAs Growth on a GaAs (311)B Substrate Using Carbon Auto-Doping for Low Resistance GaAs/AlAs Distributed Bragg Reflectors
- 1 November 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (11R) , 6728-6729
- https://doi.org/10.1143/jjap.36.6728
Abstract
A high p -type hole-concentration AlAs layer has been successfully grown on a GaAs (311)B substrate by metalorganic chemical vapor deposition with using a Carbon auto-doping technique. The doping concentration was well controlled by changing only V/III ratios. The hole concentration was as high as 2 ×1019 cm-3 at a V/III ratio of 6. A very low resistance of p -type distributed Bragg reflector was obtained with a δ-doping technique to GaAs/AlAs interfaces.Keywords
This publication has 6 references indexed in Scilit:
- Auto-doping of Carbon to AlAs Grown by Metalorganic Chemical Vapor Deposition using Trimethylaluminum and TertiarybutylarsineJapanese Journal of Applied Physics, 1997
- Structural and optical characterization of InAs/InGaAs self-assembled quantum dots grown on (311)B GaAsJournal of Applied Physics, 1996
- Optimization of planar Be-doped InGaAs VCSEL's with two-sided outputIEEE Photonics Technology Letters, 1995
- Dependence of carbon incorporation on crystallographic orientation during metalorganic vapor phase epitaxy of GaAs and AlGaAsJournal of Crystal Growth, 1994
- Dependence of optical gain on crystal orientation in surface-emitting lasers with strained quantum wellsApplied Physics Letters, 1994
- Self-organized growth of strained InGaAs quantum disksNature, 1994