Auto-doping of Carbon to AlAs Grown by Metalorganic Chemical Vapor Deposition using Trimethylaluminum and Tertiarybutylarsine
- 1 May 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (5R) , 2638-2639
- https://doi.org/10.1143/jjap.36.2638
Abstract
Carbon (C) heavily doped AlAs has been grown by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum (TMAl) and tertiarybutylarsine (TBA) without any additional dopant sources. The hole concentration was controlled by changing only the V/III ratio. The highest hole concentration was 2.5×1019 cm-3. The decrease in the lattice constant of C-doped AlAs shows that the acceptor activation ratio is close to unity.Keywords
This publication has 7 references indexed in Scilit:
- Vertical cavity surface emitting lasers with 21% efficiency by metalorganic vapor phase epitaxyIEEE Photonics Technology Letters, 1994
- N- and P-type dopant profiles in distributed Bragg reflector structures and their effect on resistanceApplied Physics Letters, 1992
- Control of residual impurity incorporation in tertiarybutylarsine-grown GaAsJournal of Crystal Growth, 1991
- Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxyApplied Physics Letters, 1990
- Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxyJournal of Crystal Growth, 1989
- Carbon incorporation in metalorganic chemical vapor deposition (Al,Ga)As films grown on (100), (311)A, and (311)B oriented GaAs substratesApplied Physics Letters, 1987
- Use of tertiarybutylarsine for GaAs growthApplied Physics Letters, 1987